Comparing inductive components for different boost converter topologies in a PV system

This paper presents a comparison study of new inductive components for different boost converter topologies in a photovoltaic (PV) system. To increase the power density of the system, new Silicon Carbide (SiC) semiconductors for faster switching as well as new inductive components were used. The increased switching frequency leads to a reduction in volume and material, but increases the thermal resistance of the inductive device. The design and the analysis were verified in a 30 A PV boost converter demonstrator.