Investigation of polycristalline Si-sheets by EBIC, electron channeling pattern -ECP- technique and etching methods

Investigations of polycrystalline Si-sheets suitable for low-cost solar cells have been performed, using electron microscopy and chemical methods. The crystallographic orientations of grains were determined by the electron channeling pattern (ECP) technique. The electrically active defect structure is imaged by means of the electron beam induced current (EBIC) method and is compared to the dislocation density determined by chemical etching. The electrical activity and the dislocation density are shown to be highly correlated, not only in untreated samples but in thermally processed ones as well. (ISE)