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  4. Vertically coupled GalnAsP/lnP microring lasers fabricated by using full wafer bonding
 
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2007
Conference Paper
Title

Vertically coupled GalnAsP/lnP microring lasers fabricated by using full wafer bonding

Abstract
We summarize results on the processing and characterization of current injected 1.55 µm single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GalnAsP/lnP-GaAs full-wafer bonding using a BCB interface.
Author(s)
Heidrich, H.
Hamacher, M.
Troppenz, U.
Syvridis, D.
Alexandropoulos, D.
Mikroulis, S.
Tee, C.W.
Williams, K.
Dragoi, V.
Alexe, M.
Cristea, D.
Kusko, C.
Kusko, M.
Mainwork
ECOC 2007, 33rd European Conference and Exhibition on Optical Communication. CD-ROM  
Conference
European Conference on Optical Communication (ECOC) 2007  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • indium compounds

  • optical waveguide

  • ring laser

  • wafer bonding

  • waveguide coupler

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