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  4. Process stabilisation for large area reactive MF-sputtering of Al-doped ZnO
 
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2006
Journal Article
Title

Process stabilisation for large area reactive MF-sputtering of Al-doped ZnO

Abstract
A control system for improving the homogeneity of transparent conductive oxide films deposited by reactive magnetron sputtering has been set up for large area in-line coating. The control system monitors operating points along the target axis by measuring the reactive gas partial pressure and a closed loop control of power and gas inlet maintains a user-defined partial pressure distribution. A deviation from set points and switching of local target states into metallic or oxide mode is prevented. As a result, the film properties such as sheet resistance, optical performance and film thickness show an improved homogeneity along the target axis.
Author(s)
Ruske, F.
Pflug, A.
Sittinger, V.
Werner, W.
Szyszka, B.
Journal
Thin solid films  
DOI
10.1016/j.tsf.2005.07.232
Language
English
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
Keyword(s)
  • Aluminium

  • Regelkreis

  • elektrische Leitfähigkeit

  • Zwei-Sechs-Verbindung

  • Optische Transmission

  • Prozesssteuerung

  • Halbleiterdünnschicht

  • Sputterabscheidung

  • Sputterüberzug

  • optische Transparenz

  • Halbleiter mit großer Energielücke

  • Zinkverbindung

  • Steuerungs- und Regelungssystem

  • reaktive Magnetronzerstäubung

  • Flächenwiderstand

  • optische Leistung

  • Schichtdicke

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