Field activated sintering technology (FAST) for ceramic materials

An electrically conductive (tungsten carbide) and a non-conductive powder (silicon nitride) were compacted using the Field Assisted Sintering Technology (FAST). Temperature measurements were performed at two different positions by varying die thickness and tool diameter. The temperature difference between these two positions was compared with FE modeling results. Experimental and modeling results show the same behavior. For an electrically conductive material, the temperature on the outside of the die is lower than close to the specimen center. For an electrically non-conductive material, the temperature on the outside of the die reaches higher values than close to the specimen center. The determination of the /ß ratio of silicon nitride as a function of the radius was used as a "temperature distribution monitor" showing the same behavior as the measured and modeled results.