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1997
Conference Paper
Title
Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Other Title
Langwellige MSM-HEMT und PIN-HEMT-Photoempfänger auf GaAs-Substraten
Abstract
1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. The In(0.53)Ga(0.47)As MSM and PIN photodiodes grown on GaAs have nearly identical characterstics as photodiodes grown on InP.
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