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  4. Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon
 
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1996
Journal Article
Title

Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon

Other Title
Dissipatives Tunneln in asymmetrischen Doppel-Quantum well Systemem. Ein Kohärenzphänomen
Abstract
Recent experiments on asymmetric double-quantum-well systems revealed unexpected long time scales of resonant tunnel processes as well as deviations from the expected dependence of the tunneling lifetime T on the barrier thickness. Both effects are related to the presence of dissipative processes. Starting from microscopic expressions for T beyond the usual golden rule approach we show that the observed behavior is a consequence of Fano interference, which implies that low-temperature dissipative tunneling can be treated as a totally coherent process. Including disorder due to interface roughness, these Fano interferences lead to a nonexponential and slowed-down decay.
Author(s)
Vaupel, H.
Thomas, P.
Kühn, O.
May, V.
Maschke, K.
Heberle, A.P.
Rühle, W.W.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.53.16531
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • heterostructure

  • Heterostruktur

  • III-V Halbleiter

  • III-V semiconductors

  • quantum wells

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