Locally selective bonding of silicon and glass with laser

A novel method for joining silicon and glass wafers with laser radiation is described. In order to characterize the locally selective bonding with laser (SBL) process, variation of laser parameters have been correlated with temperature measurements during bonding and the achieved bonding results. It was found that the temperature load outside the laser irradiated zone only lasted for seconds and remained below 300 °C. The result of the investigations was a parameter field producing reproducible and strong silicon glass bonds. Basic knowledge for the thermal process of bonding and a understanding of the recognized bond defects was developed. Finally advantages and disadvantages of SBL with silicon and glass are discussed with respect to the anodic bonding technology putting emphasis on the low temperature and locally selective bonding capability of SBL.