• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process
 
  • Details
  • Full
Options
1991
Conference Paper
Title

A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process

Abstract
This paper describes a comparator circuit fabricated ub ab AlGaAs/GaAs heterojunction bipolar process. Nonlinear current gain, thermal effects, and parasitic base collector resistance have been included in the simulation model.
Author(s)
Cepl, F.
Baureis, P.
Seitzer, D.
Zwicknagel, P.
Mainwork
Bipolar Circuits and Technology Meeting 1991. Proceedings  
Conference
Bipolar Circuits and Technology Meeting 1991  
DOI
10.1109/BIPOL.1991.160952
Language
English
IIS-A  
Keyword(s)
  • comparator

  • GaAs

  • gallium arsenide

  • HBT

  • Komparator

  • thermal effect

  • thermischer Effekt

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024