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  4. High-Performance In-Memory Bayesian Inference With Multi-Bit Ferroelectric FET
 
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2025
Journal Article
Title

High-Performance In-Memory Bayesian Inference With Multi-Bit Ferroelectric FET

Abstract
Conventional neural network-based machine learning algorithms often encounter difficulties in data-limited scenarios or where interpretability is critical. Conversely, Bayesian inference-based models excel with reliable uncertainty estimates and explainable predictions. Recently, many in-memory computing (IMC) architectures achieve exceptional computing capacity and efficiency for neural network tasks leveraging emerging non-volatile memory (NVM) technologies. However, their application in Bayesian inference remains limited because the operations in Bayesian inference differ substantially from those in neural networks. In this article, we introduce a compact in-memory Bayesian inference engine with high efficiency and performance utilizing a multi-bit ferroelectric field-effect transistor (FeFET). This design encodes a Bayesian model within a compact FeFET-based crossbar by mapping quantized probabilities to discrete FeFET states. Consequently, the crossbar’s outputs naturally represent the output posteriors of the Bayesian model. Our design facilitates efficient Bayesian inference, accommodating various input types and probability precisions, without additional calculation circuitry. As the first FeFET-based in-memory Bayesian inference engine, our design demonstrates a notable storage density of 26.32 Mb/mm<sup>2</sup> and a computing efficiency of 581.40 TOPS/W in a representative Bayesian classification task, indicating a 10.7×/43.4× compactness/efficiency improvement compared to the state-of-the-art alternative. Utilizing the proposed Bayesian inference engine, we develop a feature selection system that efficiently addresses a representative NP-hard optimization problem, showcasing our design’s capability and potential to enhance various Bayesian inference-based applications. Test results suggest that our design identifies the essential features, enhancing the model’s performance while reducing its complexity, surpassing the latest implementation in operation speed and algorithm efficiency by 2.9×/2.0×, respectively.
Author(s)
Li, Chao
College of Information Science and Electronic Engineering, Zhejiang University
Huang, Xuchu
College of Information Science and Electronic Engineering, Zhejiang University
Xu, Zhicheng
The University of Hong Kong
Wen, Bo
The University of Hong Kong
Mao, Ruibin
The University of Hong Kong
Zhou, Min
Institute of Translational Medicine, Zhejiang University
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Ni, Kai
College of Engineering
Li, Can
The University of Hong Kong
Yin, Xunzhao
College of Information Science and Electronic Engineering, Zhejiang University
Zhuo, Cheng
Zhejiang University
Journal
IEEE Transactions on Computers  
DOI
10.1109/TC.2025.3576941
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • Bayesian inference

  • feature selection

  • ferroelectric FET

  • in-memory computing

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