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  4. A Compact F-band Filter Based on SiC Substrate-integrated Waveguides
 
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2023
Conference Paper
Title

A Compact F-band Filter Based on SiC Substrate-integrated Waveguides

Abstract
F-band substrate-integrated waveguides (SIVs) are designed, fabricated, and characterized on a SiC wafer, along with SIW-based filters, impedance standards, and transitions to grounded coplanar waveguides (GCPVs). The GCPW-SIW transitions not only facilitate wafer probing, but also double as resonators to form a 3-pole band-pass filter together with an SIW resonator. The resulted filter exhibits a 1.5-dB insertion loss at 115 GHz with a 34-dB return loss and a 19-GHz (16%) 3-dB bandwidth. The size of the filter is only 63% of previous filters comprising three SIW resonators. These results show the feasibility for monolithic integration of high-quality filters with high-efficiency antennas and amplifiers in a single-chip RF frontend above 110 GHz, which is particularly advantageous for 6G wireless communications and next-generation automobile radars.
Author(s)
Wang, Xiaopeng
Cornell University, Ithaca/NY  
Asadi, Mohammad Javad
Cornell University, Ithaca/NY  
Li, Lei
Cornell University, Ithaca/NY  
Li, Tianze
Cornell University, Ithaca/NY  
Hwang, James C. M.
Cornell University, Ithaca/NY  
Thome, Fabian  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Asia-Pacific Microwave Conference, APMC 2023  
Conference
Asia-Pacific Microwave Conference 2023  
DOI
10.1109/APMC57107.2023.10439892
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • cavity resonator

  • microwave filters

  • millimeter wave integrated circuits

  • semiconductor waveguides

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