A 220-300 GHz Vector Modulator in 35 nm GaAs mHEMT Technology

This paper presents an ultrawideband H-band vector modulator based on entirely passive I/Q generation and attenuator-based amplitude modulation for frequencies beyond 200 GHz. The proposed MMIC achieves up to a 6-bit resolution. The design is implemented using a GaAs 35 nm mHEMT process and shows an RMS amplitude error of 2 dB and an RMS phase error below 5◦ before and 1 dB and 1◦ RMS error after error correction. The core chip layout area without control circuitry is 1x1.25 mm(2).