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1998
Conference Paper
Title
40 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Other Title
Monolithische Integration eines 40 Gbit/s 1.55 mu m PIN-HEMT Photoempfänger auf einem GaAs-Substrat
Abstract
A 36.5 GHz bandwidth 1.55mu m wavelength PIN-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3-inch GaAs substrate. The PIN photodiode has a responsivity of 0.34A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated.
Author(s)