A monolithic HEMT-amplifier with feedback in coplanar waveguide technology

A measurement and analysis technique has been developed that allo for, after s-parameter measurements, direct extraction of allow four transistor noise parameters from a single noise figure measurement. A simple 50 omega noise source measurement system can thus be used for noise parameter extraction, simplifying considerably the measurement of noise parameters and so enabling fully automated high frequency testing and wafer mapping measurement systems to provide both s-parameters and noise parameters.