Oxygen Incorporation into Si Nanocrystal/SiC Multilayers

We aimed to improve the properties of Si nanocrystal/SiC multilayers (ML) for the use as high bandgap solar cell absorber by the incorporation of oxygen (O). Therefore we compare the structural properties of Si nanocrystal/SiC ML with and without incorporated O by scanning electron microscopy, Raman spectroscopy and grazing incidence X-ray diffraction patterns. The O incorporation in the form of Si-O bonds was successful and a beneficial effect of O on the conservation of the ML structure during annealing and on the cSi/c-SiC ratio is observed and discussed in detail.