Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs

Optical pumping techniques and time-resolved photoluminescence have been used to study spin and exciton lifetimes in two pseudomorphic quantum well systems as a function of well width. From excitation spectroscopy with circularly polarized light, band offsets for the Insub0.16Gasub0.84As/Alsub0.29Gasub0.71As system are deduced.