MESFETs in thin silicon on SIMOX

Si MESFET's have been built into a thin (100nm) Si film on buried oxide implanted wafers. Aluminum has been used as gate material to obtain process compatibility with a high-performance CMOS process. With appropriate back bias the normally-on devices become enhancement-type. The high quality SIMOX substrate provides exellent transconductance, while the thin film reduces two-dimensional effects.