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1996
Conference Paper
Title
27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Abstract
Optical front-ends are considered to play a major role in future communication systems operating at bit rates of 20 or even 40 Gbit/s, as well as in mobile communication systems with fibre-optic distribution networks. Consequently, different approaches for the monolithic integration of high-speed receivers for a wavelength of 1.55 mu m can be found in the literature. In this paper, we report on the first monolithical integration of an optical receiver OEIC, which combines the advantageous high-speed characteristics of the waveguide integrated pin photodiode and of the travelling wave amplifier (TWA) circuit, both based on the InP material system.
Conference
Keyword(s)
aluminium compounds
gallium arsenide
HEMT integrated circuits
high-speed optical techniques
iii-v semiconductors
indium compounds
integrated optoelectronics
optical receivers
optical waveguide components
p-i-n photodiodes
travelling wave amplifiers
photoreceiver
waveguide fed pin photodiode
HEMT travelling wave amplifier
optical front-end
monolithic integration
high-speed optical receiver
oeic
1.55 micron
27 GHz
GaInAs-AlInAs