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  4. 27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
 
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1996
Conference Paper
Title

27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier

Abstract
Optical front-ends are considered to play a major role in future communication systems operating at bit rates of 20 or even 40 Gbit/s, as well as in mobile communication systems with fibre-optic distribution networks. Consequently, different approaches for the monolithic integration of high-speed receivers for a wavelength of 1.55 mu m can be found in the literature. In this paper, we report on the first monolithical integration of an optical receiver OEIC, which combines the advantageous high-speed characteristics of the waveguide integrated pin photodiode and of the travelling wave amplifier (TWA) circuit, both based on the InP material system.
Author(s)
Umbach, A.
Passenberg, W.
Unterborsch, G.
Mekonnen, G.G.
Schlaak, W.
Schramm, C.
Ebert, W.
Wolfram, P.
Bach, H.-G.
Waasen, S. van
Bertenburg, R.M.
Janssen, G.
Reuter, R.
Auer, U.
Tegude, F.-J.
Mainwork
54th Annual Device Research Conference 1996. Digest  
Conference
Device Research Conference (DRC) 1996  
DOI
10.1109/DRC.1996.546436
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • aluminium compounds

  • gallium arsenide

  • HEMT integrated circuits

  • high-speed optical techniques

  • iii-v semiconductors

  • indium compounds

  • integrated optoelectronics

  • optical receivers

  • optical waveguide components

  • p-i-n photodiodes

  • travelling wave amplifiers

  • photoreceiver

  • waveguide fed pin photodiode

  • HEMT travelling wave amplifier

  • optical front-end

  • monolithic integration

  • high-speed optical receiver

  • oeic

  • 1.55 micron

  • 27 GHz

  • GaInAs-AlInAs

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