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  4. Stable, Low Power and Bit-Interleaving Aware SRAM Memory for Multi-Core Processing Elements
 
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2021
Journal Article
Title

Stable, Low Power and Bit-Interleaving Aware SRAM Memory for Multi-Core Processing Elements

Abstract
The machine learning and convolutional neural network (CNN)-based intelligent artificial accelerator needs significant parallel data processing from the cache memory. The separate read port is mostly used to design built-in computational memory (CRAM) to reduce the data processing bottleneck. This memory uses multi-port reading and writing operations, which reduces stability and reliability. In this paper, we proposed a self-adaptive 12T SRAM cell to increase the read stability for multi-port operation. The self-adaptive technique increases stability and reliability. We increased the read stability by refreshing the storing node in the read mode of operation. The proposed technique also prevents the bit-interleaving problem. Further, we offered a butterfly-inspired SRAM bank to increase the performance and reduce the power dissipation. The proposed SRAM saves 12% more total power than the state-of-the-art 12T SRAM cell-based SRAM. We improve the write performance by 28.15% compared with the state-of-the-art 12T SRAM design. The total area overhead of the proposed architecture compared to the conventional 6T SRAM cell-based SRAM is only 1.9 times larger than the 6T SRAM cell.
Author(s)
Yadav, N.
Kim, Y.
Li, S.
Choi, K.K.
Journal
Electronics. Online journal  
Open Access
DOI
10.3390/electronics10212724
Additional link
Full text
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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