Hydrodynamic modeling of AlGaN/GaN HEMTs

For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron transport. We modify an existing hydrodynamic mobility model in order to achieve a better agreement with Monte Carlo (MC) simulation data and measured DC and AC characteristics of AlGaN/GaN HEMTs.