Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation

The optimization of MBE growth conditions and layer structures for room temperature operation of 2.26 mu m AlGaAsSb/GalnAsSb laser structures is investigated. Index guided triple quantum well large optical cavity diode lasers with 64 mu m x 1000 mu m cavities and high reflection/antireflection coated facets reveal a cw output power of 350 mW at T = 280 K. An internal quantum efficiency eta(i) of 69 %, internal losses chi(i) of 7.7 cm(exp -1) and a threshold current density for infinite cavity length of 144 A/cm2 are obtained for this structure.