Highly efficient Terahertz photoconductive switch at 1060nm excitation wavelength

Broadband and sensitive Terahertz (THz) emitter and detector material is required to build cost-effective and mobile THz time-domain spectrometer systems (TDS). We present an efficient THz switch optimized for femtosecond lasers operating at the central wavelength of about 1060 nm. Performance is improved by a factor of 20 due to the implementation of mesa structuring and utilization of low temperature grown (LT) Bedoped InGaAs/InAlAs antenna material.