Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process

In this letter, the realization of planar zero bias Schottky diodes on an InGaAs metamorphic high-electron-mobility transistor (mHEMT) MMIC technology is presented. The aim is to investigate the optimum performance for detector applications in an integrated MMIC solution. Device optimization was performed, by analyzing the voltage responsivity of each single diode variation. Voltage responsivities of up to 18000 V/W at W-band frequencies on an intrinsic diode level were achieved. Furthermore, a detector MMIC centered around 105 GHz was realized with a maximum voltage responsivity of 7700 V/W.