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  4. A 144 GHz power amplifier MMIC with 11dBm output power, 10 dB associated gain and 10 % power-added efficiency
 
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2009
Conference Paper
Title

A 144 GHz power amplifier MMIC with 11dBm output power, 10 dB associated gain and 10 % power-added efficiency

Abstract
A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 135 and 155 GHz is presented. The D-band power amplifier, realized in a 100 nm gate length metamorphic high electron mobility transistor technology, employs a three-stage design with four parallel transistors in the output stage. At 144 GHz and under 1-dB gain compression, the amplifier achieves an output power of more than 11 dBm with an associated gain of 10 dB and a high power-added efficiency of 10%. A comparison to state-of-the-art power amplifiers at high millimeter-wave frequencies is given.
Author(s)
Kallfass, I.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Pahl, P.
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tessmann, Axel  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Koch, S.
Zwick, T.
Mainwork
IEEE MTT-S 2009, International Microwave Symposium Digest  
Conference
International Microwave Symposium Digest (MTT-S) 2009  
DOI
10.1109/MWSYM.2009.5165725
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • MMIC

  • millimeter-wave power amplification

  • millimeter wave FET integrated circuits

  • mHEMTS

  • D-band

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