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  4. High-brightness long-wavelength semiconductor disk lasers
 
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2008
Journal Article
Title

High-brightness long-wavelength semiconductor disk lasers

Other Title
Hochbrilliante Halbleiter-Scheibenlaser bei langen Wellenlängen
Abstract
A review on the recent developments in the field of long-wavelength (Lambda >1.2 µm) high-brightness optically-pumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different III-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 µm and 5.3 µm are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.
Author(s)
Schulz, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hopkins, J.-M.
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Burns, D.
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Laser & photonics reviews  
DOI
10.1002/lpor.200710037
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • laser

  • semiconductor disc laser

  • Halbleiter-Scheibenlaser

  • VECSEL

  • OPSDL

  • infrared

  • Infrarot

  • III-V semiconductor

  • III-V Halbleiter

  • IV-VI semiconductor

  • IV-VI Halbleiter

  • Brillanz

  • brilliance

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