• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. MOSFET gas sensor with integrated temperature measurement and heating elements fabricated with standard CMOS technology
 
  • Details
  • Full
Options
1988
Conference Paper
Titel

MOSFET gas sensor with integrated temperature measurement and heating elements fabricated with standard CMOS technology

Abstract
Gas sensor based on MOSFET devices with a catalytic active metal gate are well suited for the detection of various gases like hydrogen, ammonia or carbon monoxide. The compatibility of fabricating the MOSFET gas sensors with standard silicon IC technology enables direct sensor data acquisition and processing on one chip. Due to the low power consumption, the high noise margin and the possibility to combine digital as well as analog circuits, CMOS-Technology seems to be favourable for sensor electronics.
Author(s)
Dobos, K.
Mokwa, W.
Vogt, H.
Zhang, Y.
Zimmer, G.
Xiao, G.
Hauptwerk
Eurosensors II. Book of Abstracts
Konferenz
Eurosensors 1988
Thumbnail Image
Language
English
google-scholar
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS
Tags
  • gassensor

  • MOSFET

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022