Monolithisch integrierter optoelektronischer Empfänger mit einer Bandbreite von 14 GHz basierend auf einer MSM-Photodiode und AlGaAs/GaAs-HEMTs
Abstract
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifier has been fabricated using an enhancement/depletion 0.3Mym recessed-gate AlGaAs/GaAs HEMT process. The bandwidth of 14.3GHz implies suitability for transmission rates of up to 20Gbit/s. The transimpedance is 670Omega (into 50Omega) and the projected sensitivity is - 16.4 dBm (BER is equal to 10highminus9).
