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  4. Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC
 
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2020
Journal Article
Titel

Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC

Abstract
Color centers in silicon carbide (SiC) are promising candidates for quantum technologies. However, the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging. In this study, helium ion-implanted 4HSiC was characterized by atomic force microscopy (AFM), confocal photoluminescence (PL), and confocal Raman spectroscopy at room temperature. PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping. Lattice defects (CC bond) were detected by continuous laser excitation at 532 nm and 638 nm, respectively. PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects. Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup, helium bubbles, as well as swelling.
Author(s)
Song, Ying
State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University
Xu, Zongwei
State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University
Li, Rongrong
State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University
Wang, Hong
State Key Laboratory of Separation Membranes and Membrane Processes, Tianjin Polytechnic University
Fan, Yexin
State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University
Rommel, Mathias orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Liu, Jiayu
State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University
Astakhov, Georgy V.
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
Hlawacek, Gregor
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
Li, Bingsheng
State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology
Xu, Jun
State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University
Fang, Fengzhou
State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University
Zeitschrift
Nanomanufacturing and metrology
Funder
National Natural Science Foundation of China NSFC
National Natural Science Foundation of China NSFC
National Key Research and Development Program of China
Thumbnail Image
DOI
10.1007/s41871-020-00061-8
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Tags
  • helium ion implantation

  • Silicon Carbide (SiC)

  • color center

  • point defect

  • silicon vacancy

  • confocal photoluminescence spectroscopy

  • raman spectroscopy

  • Atomic Force Microscopy (AFM)

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