Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
Implantationsinduzierte strukturelle Defekte in hoch aktivierten ultraflachen pn-Übergängen: Präzipitation und Trapping von Bor in voramorphisiertem Silicium
Today, most of the state-of-the-art USJs fabrication processes involve the formation of an amorphous surface layer before or during the dopant implant step. In this paper, we present a review of some recent experimental studies on the Boron precipitation and trapping in pre-amorphised USJs. These studies suggest that the physical mechanism governing the Boron trapping mainly depends on the Boron concentration left below the a/c interface after the implant. Tn addition to providing a contribution to the understanding of the Boron trapping phenomenon, these results clearly indicate that physical models for the formation of large Boron precipitates need to be implemented in TCAD simulators for a comprehensive description of the USJ fabrication process.