Gas dependent changes in the electrical behavior of selective metal-oxide layers
To overcome the lack of selectivity in semiconducting metal-oxide based sensors material research plays a crucial role. The fundamental understanding of the surface effects and the respective underlying processes is necessary for a future exploitation as sensing principle. Recently, copper(II)oxide (CuO) gained increased interest due to the highly selective reaction towards hydrogen sulfide (H<inf>2</inf> S). However, the profound shifts in material properties make reliable data acquisition very challenging. We present some of the current results on CuO and a measurement technique to precisely monitor the changes in the overall electronic characteristics. The phase transition from semiconducting to conducting behavior in CuO sensing layers is measured in-situ under H<inf>2</inf>S exposure, thereby deepening the understanding of the underlying interactions.