Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon
Abstract
Due to their robustness against various experimental artifacts and the high sensitivity at low minority carrier concentrations, quasi-steady-state photoluminescence lifetime measurements are well suited to provide the experimental data required for advanced defect spectroscopy methods. However, for a correct evaluation, photon reabsorption has to be considered. In this work it is evaluated quantitatively, to what extent and in which temperature range photon reabsorption in silicon wafers is significant. A method to correct the effect of photon reabsorption within silicon wafers on temperature dependent quasi-steady-state photoluminescence lifetime measurements is presented.
