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  4. Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications
 
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2009
Conference Paper
Titel

Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications

Abstract
The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 µm and 0.15 µm AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.
Author(s)
Suijker, E.M.
Rodenburg, M.
Hoogland, J.A.
Heijningen, M. van
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quay, Rüdiger orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Brueckner, Peter
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Vliet, F.E. van
Hauptwerk
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2009
Konferenz
Compound Semiconductor Integrated Circuit Symposium (CSICS) 2009
Thumbnail Image
DOI
10.1109/csics.2009.5315640
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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