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  4. High power GaSb-based optically pumped VECSEL at 2.3 µm
 
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2006
Conference Paper
Title

High power GaSb-based optically pumped VECSEL at 2.3 µm

Abstract
We report on the operation and characterization of a GaSb-based VECSEL at 2.33m. Using an intra-cavity CVD diamond heat spreader, a maximum output power of 0.6W was obtained, and still 0.4W in TEM00 mode (M 2=1.1).
Author(s)
Schulz, N.
Rattunde, Marcel  
Manz, Christian  
Köhler, Klaus  
Wild, C.
Wagner, J.
Mainwork
Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science Conference, Conference on Photonic Applications, Systems and Technologies. Technical digest CD-ROM  
Conference
Conference on Lasers and Electro-Optics 2006  
Quantum Electronics and Laser Science Conference 2006  
Conference on Photonic Applications, Systems and Technologies 2006  
DOI
10.1109/CLEO.2006.4628737
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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