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  4. Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
 
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2010
Conference Paper
Titel

Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz

Abstract
This work describes the integration of Schottkydiodes into fast GaN MMIC technology suitable for the realization of switch-mode amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called 3rd-quadrant-issue, which reduces the efficiency in bandpass-Delta-Sigma class-S-type amplifiers, can be diminished on device level. MMIC core chips are demonstrated which provide good PAE under Delta-Sigma operation at 5.2 Gbps.
Author(s)
Maroldt, S.
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Quay, RĂ¼diger orcid-logo
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Haupt, C.
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Kiefer, R.
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Wiegner, D.
Ambacher, Oliver
Fraunhofer-Institut fĂ¼r Angewandte Festkörperphysik IAF
Hauptwerk
40th European Microwave Conference, EuMC 2010. CD-ROM
Konferenz
European Microwave Conference (EuMC) 2010
European Microwave Week 2010
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Language
English
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