GaAs HEMT ICs for 40 Gbit/s data transmission systems

Lang, M.; Nowotny, U.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, Wolfgang; Kaufel, G.; Köhler, Klaus; Raynor, B.; Schneider, J.

1997

Conference Paper

Abstract

Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized different ICs for optoelectronic data transmission systems. In this paper we describe several chips for a 40 Gbit/s system. The results presented here have been obtained on wafer with a 50 Omega coplanar test system.