• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Purified steam for industrial thermal oxidation processes
 
  • Details
  • Full
Options
2010
Conference Paper
Titel

Purified steam for industrial thermal oxidation processes

Abstract
Silicon surfaces are very effectively passivated by silicon thermal oxides. Silicon thermal oxides are grown in a dry oxygen atmosphere or in steam, whereas the thermal oxide growth rate is about one order of magnitude higher for a steam ambient. This considerably reduces the process time and cost. State of the art pyrox systems generate steam by pyrolysis of hydrogen and oxygen gas. A new approach is the purification of vaporized deionized water. In this work, we present a direct comparison of both systems. Additionally both systems are connected to the same quartz oxidation tube. The higher steam saturation of the steam purifying device results in a 20% higher growth rate. Nevertheless, on low resistivity p-type substrates, after a forming gas anneal an excellent surface recombination velocity of around 25 cm/s is found for thermal oxides grown with each of the systems. Moreover, 110 ?m thick thermal oxide rear surface passivated silicon solar cells show similar efficiencies of 18%, irrespective of the applied steam generation technology.
Author(s)
Mack, S.
Biro, D.
Wolf, A.
Thaidigsmann, B.
Walczak, A.
Spiegelman, J.J.
Preu, R.
Hauptwerk
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.5
Konferenz
Photovoltaic Specialists Conference (PVSC) 2010
DOI
10.1109/PVSC.2010.5614171
File(s)
001.pdf (72.45 KB)
Language
English
google-scholar
Fraunhofer-Institut für Solare Energiesysteme ISE
Tags
  • PV Produktionstechnol...

  • Silicium-Photovoltaik...

  • Solarthermie

  • Pilotherstellung von ...

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022