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  4. NH4OH-based etchants for silicon micromachining
 
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1990
Journal Article
Titel

NH4OH-based etchants for silicon micromachining

Abstract
Wet chemical etchants based on ammonium hydroxide-water (AHW) solutions for micromachining monocrystalline silicon are described. The etchants can be applied under clean-room conditions within standard IC fabrication lines. The nature of AHW solutions is discussed with respect to anisotropy and selectivity. At 75 degrees C and 9 wt. per cent AHW, a maximum etch rate for (100) silicon of approximately 30 mym/h has been determined. (111):(100) etch rate ratios show values around 4 per cent. AHW etchants exibit an excellent selectivity to SiO sub 2, Si sub 3 N sub 4 and highly boron-doped silicon. Aluminium will not be attacked by silicon-doped AHW etchants. Therefore, standard IC metallization techniques can be used for device fabrication. The application of AHW solutions to the fabrication of basic micromechanical structures is demonstrated.
Author(s)
Schnakenberg, U.
Löchel, B.
Benecke, W.
Zeitschrift
Sensors and Actuators. A
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DOI
10.1016/0924-4247(90)87084-V
Language
English
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Fraunhofer-Institut fĂĽr Siliziumtechnologie ISIT
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