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  4. High-density plasma deposited silicon nitride films for coating InGaAlAs high-power lasers
 
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2002
Conference Paper
Titel

High-density plasma deposited silicon nitride films for coating InGaAlAs high-power lasers

Alternative
ECR-Plasma abgeschiedene Siliziumnitrid-Schichten zur Beschichtung von InGaAlAs Hochleistungslaser-Facetten
Abstract
Silicon nitride (SiN) films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique have been used as optical coatings for the emitting facet of InGaAs/AlGaAs high-power lasers. The films were deposited at 90 deg C from a mixture of Ar, N2 and SiH4 as precursors. The most important properties of the films are low intrinsic stress and a negligible hysteresis in stress upon thermal cycling. Pre-cleaning of the surface to be coated, and the stable low stress in the film used for coating have been found to be highly valuable for the reliability of InGaAs/AlGaAs high-power lasers.
Author(s)
Sah, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Rinner, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Mikulla, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hauptwerk
Plasma processing XIV. Proceedings of the International Symposium
Konferenz
International Symposium on Plasma Processing 2002
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English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • silicon nitride film

  • Siliziumnitrid

  • optical coating

  • optische Schichten

  • high-power laser

  • Hochleistungslaser

  • life time

  • Lebensdauer

  • dielectric films

  • dielektrische Schicht...

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