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  4. Growth and fabrication of quasivertical current aperture vertical electron transistor structures
 
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2021
Journal Article
Title

Growth and fabrication of quasivertical current aperture vertical electron transistor structures

Abstract
The current aperture vertical electron transistor (CAVET) combines the high carrier mobility of the AlGaN/GaN heterostructure with the better electric field distribution of the vertical topology, allowing for higher power densities if compared with lateral high electron mobility transistors (HEMTs). The formation of a current blocking layer (CBL), without degenerating the aperture region and the subsequently overgrown AlGaN/GaN heterostructure is the key building block of such devices. Herein, a comparison of GaN:Mg nonplanar selective area growth (SAG) and Mg-ion implantation is carried out primarily focusing on structural evolution, Mg distribution, and 2D electron gas (2DEG) performance. The epitaxial growth process in SAG is correlated to local growth increase and ridge development, and then optimized regarding mesa filling. AlGaN/GaN regrowth is analyzed regarding structural evolution after overgrowth and Mg distribution into the GaN channel. Considerably lower Mg-distribution into subsequently grown layers is detected for implanted samples in agreement with the electrical performance of the overgrown AlGaN/GaN heterostructures. AGaN-on-Si quasivertical CAVET structure with an Mg-implanted CBL and 250 nm channel thickness is fabricated. High surface quality and proper 2DEG performance demonstrate the potential use of GaN-on-Si CAVET's using Mg implantation for CBL fabrication.
Author(s)
Doering, Philipp
INATECH, Univ. Freiburg
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leone, Stefano  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Müller, Stefan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Waltereit, Patrick  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Polyakov, Vladimir M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physica status solidi. A  
Open Access
File(s)
Download (3.13 MB)
Rights
CC BY-NC-ND 4.0: Creative Commons Attribution-NonCommercial-NoDerivatives
DOI
10.24406/publica-r-264489
10.1002/pssa.202000379
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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