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  4. Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only
 
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1996
Journal Article
Title

Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only

Abstract
An optimized integration process is reported requiring only three epitaxial growth steps for the fabrication of an OEIC encompassing a single-mode laser, a waveguide element, and fast photodiodes. The process was applied to the fabrication of a heterodyne receiver including a semi-insulating buried heterostructure (SIBH)-DFB-laser with an output power of 14 mW and a side-mode suppression ratio greater than 40 dB, a 3-dB coupler, and high-speed balanced photodiodes with a bandwidth of 9 GHz. The laser can also be used as a transmitter laser exhibiting a modulation bandwidth of 11 GHz.
Author(s)
Hamacher, M.
Trommer, D.
Li, K.
Schroeter-Janssen, H.
Rehbein, W.
Heidrich, H.
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/68.475783
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • integrated optoelectronics

  • optical fabrication

  • optical receivers

  • vapour phase epitaxial growth

  • heterodyne receiver

  • oeic

  • optimized integration

  • movpe

  • fabrication

  • single-mode laser

  • waveguide

  • semi-insulating buried heterostructure dfb-laser

  • coupler

  • high-speed photodiode

  • epitaxial growth

  • 14 mw

  • 9 GHz

  • 11 GHz

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