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  4. Design of coplanar power amplifiers for MM-wave system applications including thermal aspects
 
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2000
Conference Paper
Title

Design of coplanar power amplifiers for MM-wave system applications including thermal aspects

Other Title
Entwurf von koplanaren Leistungsverstärkern für Systemanwendungen im Millimeterbereich, einschließlich der thermischen Aspekte
Abstract
Due to the poor thermal conductivity of GaAs, successful power amplifier design in coplanar technology requires careful thermal considerations. The influences of the active device geometry and mounting conditions have been investigated theoretically and experimentally to provide reliable thermal management design data. 50-æm thinning and flip-chip with thermal bump attachment on AIN or diamond exhibited temperature rises in the order of 50 and 40-30øC respectively, leading to significant improvement in the performance of coplanar power devices and circuits. These results demonstrate the potential of coplanar MMIC technology for high power applications.
Author(s)
Bessemoulin, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Marsetz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Baeyens, Y.
Osorio, R.
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hülsmann, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Gallium Arsenide & and Other Semiconductors Application Symposium (GAAS) 2000. Proceedings  
Conference
Gallium Arsenide & and Other Semiconductors Application Symposium (GAAS) 2000  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • coplanar MMIC

  • koplanare MMIC

  • power amplifier

  • Leistungsverstärker

  • thermal management

  • thermisches Management

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