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  4. 45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
 
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1997
Journal Article
Title

45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC

Other Title
AlGaAs HEMT integrierte Multiplexer bis 45 Gbit/s
Abstract
A high-speed time-division 2:1 multiplexer is presented. The IC is fabricated with the authors' standard 0.2 mu m gate-length enhancement and depletion AlGaAs/GaAs HEMT technology (integral of Tau = 60 and 55GHz). The circuit can operate up to 45Gbit/s using single-ended data and clock inputs. The differential output voltage is 1 V(p-p). The power consumption is 500 mW using a single supply voltage of -4.5 V.
Author(s)
Lao, Z.
Nowotny, U.
Thiede, A.
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kaufel, G.
Rieger-Motzer, M.
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seibel, J.
Hülsmann, A.
Journal
Electronics Letters  
DOI
10.1049/el:19970364
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • AlGaAs/GaAs HEMT

  • integrated circuit

  • integrierte Schaltung

  • multiplexer

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