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  4. Influence of the electron-electron and electron-phonon interaction on the cyclotron resonance of 2DEG in GaAs
 
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1996
Journal Article
Title

Influence of the electron-electron and electron-phonon interaction on the cyclotron resonance of 2DEG in GaAs

Other Title
Einfluß der Elektron-Elektronen und Elektron-Phonon Wechselwirkung auf die zyklotron-Resonanz eines 2 DEG in GaA
Abstract
The resonant polaron effect was investigated for cyclotron transitions N-> N + 1 in magnetic field regimes where the Landau levels N = 2 and 3 cross with the level N = 0 plus one bulk longitudinal optical phonon. The experiment is analyzed in the framework of the improved Wigner-Brillouin perturbation theory taking into account band-coupling phenomena, a finite thickness of the inversion layer in the growth direction, and coupling of the cyclotron transitions due to electron-electron interactions. From the cyclotron mass enhancements, a Fröhlich coupling constant alpha = 0.06 to 0.07 was obtained.
Author(s)
Hu, C.M.
Batke, E.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ganser, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Surface Science  
DOI
10.1016/0039-6028(96)00444-X
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • heterostructure

  • Heterostruktur

  • III-V Halbleiter

  • III-V semiconductors

  • quantum wells

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