Narrow linewidth 2 µm GaSb-based semiconductor disk laser

In recent years, optically pumped semiconductor disk lasers (OPSDLs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance OPSDLs based on the (AlGaIn)(AsSb) material system with emission wavelengths ranging from 1.8 to 2.8 m has been reported [2 - 3]. These long-wavelength semiconductor disk lasers are capable of emitting multiple Watt CW-output power (e.g. up to 5 W at 2.0 m [2]) with a multimode emission spectra, making this laser source suitable for direct applications such as material processing and medical therapy. Other applications in this wavelength regime such as spectroscopy, long-range gas sensing (LIDAR) and free-space optical data transmission via phase modulation require narrow linewidth laser sources (sub-MHz regime) with moderately high output power (0.1-1 W range).