Investigation of diamond deposition uniformity and quality for freestanding film and substrate applications
Abstract
In this paper, we report on microwave CVD deposition of high quality polycrystalline diamond and on related post-processing steps to produce smooth, flat and uniformly thick films or diamond substrates. The deposition reactor is a 2.45 GHz microwave cavity applicator with the plasma confined inside a 12 cm diameter fused silica bell jar. The deposition substrates utilized are up to 75 mm diameter silicon wafers. The substrate holder is actively cooled with a water-cooled substrate holder to achieve a substrate surface temperature of 600-1150 C. The pressure utilized is 60-180 Torr and the microwave incident power is 2-4.5 kW. Important parameters for the deposition of thick films with uniform quality and thickness include substrate temperature uniformity as well as plasma discharge size and shape. As deposited thickness uniformities of ± 5% across 75 mm diameters are achieved with simultaneous growth rates of 1.9 m/h. The addition of argon to the deposition gases improv es film deposition uniformity without decreasing growth rate or film quality, over the range of parameters investigated. Post-processing includes laser cutting of the diamond to a desired shape, etching, lapping and polishing steps.
