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  4. Electron paramagnetic resonance of the shallow Sn donor in GaAs/Al0.68Ga0.32As-Sn heterostructures.
 
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1991
Journal Article
Title

Electron paramagnetic resonance of the shallow Sn donor in GaAs/Al0.68Ga0.32As-Sn heterostructures.

Other Title
Elektronenspinresonanz des flachen Sn Donators in GaAs/Al0.68Ga0.32As-Sn Heterostrukturen
Abstract
A new, light-induced electron paramagnetic resonance (EPR) signal with apparent tetragonal symmetry has been observed in n-type Alsub0.68Gasub0.32As:Sn layers grown on SI-GaAs. A comparison with previous magnetic resonance data for the shallow Si donor indicates that the signal corresponds to the shallow, X-valley- associated effective-mass state of the Sn donor. The optical behaviour of the new signal shows that the shallow state is a metastable state of the Sn DX centre. The nearly vanishing EPR intensity for magnetic fields in the layer is attributed to the large spin-valley interaction expected for the shallow Sn donor in indirect AlGaAs.
Author(s)
Wilkening, W.
Bauser, E.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/6/10B/016
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electron paramagnetic resonance

  • Elektronenspinresonanz

  • flacher Donator

  • GaAs/AlGaAs heterostructure

  • GaAs/AlGaAs-Heterostruktur

  • shallow donor

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