Instrumental determination of phosphorus in silicon for photovoltaics by v spectroscopy: A new approach

In this study, we report on the investigation of a v-g-anticoincidence set up for the determination of phosphorus in silicon for photovoltaics by Instrumental Neutron Activation Analysis. For the suppression of disturbing v/g radiation emitted by impurities, a plastic scintillator for v-detection is surrounded by a well type NaI(Tl) g-detector. A suppression of 40 % for the impurities 60Co and 124Sb could be achieved. The limit of detection was determined to be less than 0.1 ppm. In order to correct different v absorption, dedicated Geant4 simulations were used. With first quantitative measurements the phosphorus concentration in silicon could be determined.