Fourier transform photoluminescence spectroscopy of n-type bulk InAs and InAs/AlSb single quantum wells

An optical study of n-type bulk InAs and epitaxially grown InAs-AlSb single quantum wells is presented. Fourier transform PLE spectra from a series of bulk samples with varying dopant concentration give evidence for the existence of a Fermi-edge singularity in the bulk semiconductor. In addition, for the first time the spatially indirect photoluminescence of type II InAs-AlSb single quantum wells is presented. The spectra in the mind infrared show the influence of the varying well widths on the confinement effects. The luminescence peaks in such quantum wells are observed about 80 meV below the transition energy expected from selfconsistent calculations using a two-band envelope function model. This behaviour is tentatively explained by the presence of deep acceptor-like states in the interface region of the barrier material.