A Ka-Band Three-Way Doherty Power Amplifier in 150-nm GaN Technology

This paper discusses the design of a Ka-band three-way Doherty power amplifier (DPA) based on load-pull simulations and network analysis of an impedance-invertingnetwork (IIN). A Ka-band three-way DPA demonstrator was fabricated using Fraunhofer IAF’s 150-nm Gallium Nitride (GaN) process. Under continuous-wave excitation from 26.5 to 29 GHz, the three-way DPA delivers an output power (Pout) of 35.3-37 dBm associated with a PAE ≥24.8%,≥17.5% and ≥14.3% at peak power, 6 and 9 dB back-off (BO), respectively.