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  4. A Combined Methodology to Include System Effects in Board-Level Stress Simulations
 
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2019
Conference Paper
Title

A Combined Methodology to Include System Effects in Board-Level Stress Simulations

Abstract
The development of automotive electronics towards autonomous driving applications generates various challenges, in particular also on the reliable functionality of components originally designed for consumer products. In addition to use with higher environmental loadings, e.g. higher temperatures, the microsystems must also stay reliable in other mounting situations. For analysis of these effects a methodology has been developed combining FEA and high precision optical measuring techniques for determination of in-plane and out-of-plane (warpage) deformations. A systematic study on mounting effects, i.e. on "3 rd level reliability", is reported New test setups were constructed to investigate effects of mounting. The ""3 rd level"" component loadings are either from screwing on aluminum plates or from four-point bending loading stages. For both test setups, a mismatch loading from the aluminum-baseplate is superimposed on the component-board mismatch loading. Sensor systems in QFN packages were chosen from the spectrum of characteristic CE packages. Both in-plane and warpage effects are studied from 1 st to 3 rd level by the combined method Simulation assumptions are discussed From the results it is shown that intrinsic deformations and warpages need to be considered directly in AE system design and indirectly when evaluating stress risks, e.g. for solder fatigue.
Author(s)
Dudek, Rainer  
Hildebrandt, Marcus  
Rzepka, Sven  
Döring, Ralf  
Scheiter, Lutz
Tröger, B.
Zhang, M.J.
Ortmann, R.W.
Mainwork
20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019  
Conference
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) 2019  
DOI
10.1109/EuroSimE.2019.8724584
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
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